2SC4264 Datasheet, PDF(2/6 Page) Hitachi Semiconductor

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2SC4264 Datasheet, PDF (2/6 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial

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2SC4264

Electrical Characteristics

Item

Collector to base breakdown voltage

Collector cutoff current

Emitter cutoff current

Collector to emitter saturation voltage

DC current transfer ratio

Collector output capacitance

Gain bandwidth product

Symbol

V(BR)CBO

ICBO

ICEO

IEBO

VCE(sat)

hFE

Cob

Min

1.4

(Ta = 25Â°C)

Typ Max Unit

Test conditions

V IC = 10 ÂµA, IE = 0

0.5

ÂµA VCB = 15 V, IE = 0

ÂµA VCE = 11 V, RBE = â

1.0

ÂµA VEB = 3 V, IC = 0

0.7

V IC = 10 mA, IB = 5 mA

VCE = 10 V, IC = 5 mA

1.5

pF VCB = 10 V, IE = 0, f = 1MHz

GHz VCE = 10 V, IC = 10 mA

Rev.3.00 Aug 10, 2005 page 2 of 5

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