2SC4262 Datasheet, PDF (3/5 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial

2SC4262
Main Characteristics
Maximum Collector Dissipation Curve
120
100
80
60
40
20
0
50
100
150
Ambient Temperature Ta (°C)
DC Current Transfer Ratio vs.
Collector Current
200
V_CE = 10V
160
120
80
40
0
1
2
5 10 20
50
Collector Current I_C (mA)
Gain Bandwidth Product
vs. Collector Current
5
V_CE = 10 V
4
3
2
1
0
1
2
5 10 20
50
Collector Current I_C (mA)
Rev.3.00 Aug 10, 2005 page 3 of 4
Typical Output Characteristics
20
240
16
12
200
160
120
8
80
4
40 µA
I_B = 0
0
2
4
6
8
10
Collector to Emitter Voltage V_CE (V)
Collector Output Cpacitance vs.
Collector to Base Voltage
2.0
I_E = 0
f = 1 MHz
1.6
1.2
0.8
0.4
0
1
2
5 10 20
50
Collector to Base Voltage V_CB (V)