2SC4262 Datasheet, PDF(2/5 Page) Hitachi Semiconductor

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2SC4262 Datasheet, PDF (2/5 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial

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2SC4262

Electrical Characteristics

Item

Symbol Min

Collector to base breakdown voltage

V(BR)CBO

Collector to emitter breakdown voltage V(BR)CEO

Collector cutoff current

ICBO

Emitter cutoff current

IEBO

Collector to emitter saturation voltage

VCE(sat)

DC current transfer ratio

hFE

Collector output capacitance

Cob

Gain bandwidth product

1.4

(Ta = 25Â°C)

Typ Max Unit

Test conditions

V IC = 10 ÂµA, IE = 0

V IC = 1 mA, RBE = â

0.5

ÂµA VCB = 15 V, IE = 0

1.0

ÂµA VEB = 3 V, IC = 0

0.5

V IC = 20 mA, IB = 4 mA

200

VCE = 10 V, IC = 5 mA

1.0

pF VCB = 10 V, IE = 0, f = 1MHz

2.9

GHz VCE = 10 V, IC = 5 mA

Rev.3.00 Aug 10, 2005 page 2 of 4

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