2SC4226-T1-A Datasheet, PDF (3/8 Pages) Renesas Technology Corp – NPN Silicon RF Transistor NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise Amplification 3-pin super Minimold

2SC4226
TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
250
Free Air
200
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
5
f = 1 MHz
2
150
1
100
0.5
50
0
25 50 75 100 125 150
Ambient Temperature TA (˚C)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
20
VCE = 3 V
10
0
0.5
1
Base to Emitter Voltage VBE (V)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
200
VCE = 3 V
100
0.2
0.1
1
2
5
10
20
50
Collector to Base Voltage VCB (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
25
160 ^μA
140 ^μA
20
120 ^μA
15
100 ^μA
80 ^μA
10
60 ^μA
40 ^μA
5
IB = 20 ^μA
0
5
10
Collector to Emitter Voltage VCE (V)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
20
VCE = 3 V
f = 1 GHz
10
50
5
20
10
0.5 1
5 10
50
Collector Current IC (mA)
Remark The graphs indicate nominal characteristics.
2
1
0.5 1
5 10
50
Collector Current IC (mA)
R09DS0022EJ0200 Rev.2.00
Jun 29, 2011
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