2SC4226-T1-A Datasheet, PDF (2/8 Pages) Renesas Technology Corp – NPN Silicon RF Transistor NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise Amplification 3-pin super Minimold

2SC4226
ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter
DC Characteristics
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
RF Characteristics
Gain Bandwidth Product
Insertion Power Gain
Noise Figure
Reverse Transfer Capacitance
Symbol
Test Conditions
ICBO
IEBO
h ^{Note 1}
FE
VCB = 10 V, IE = 0
VEB = 1 V, IC = 0
VCE = 3 V, IC = 7 mA
fT
⏐S21e⏐²
NF
C ^{Note 2}
re
VCE = 3 V, IC = 7 mA
VCE = 3 V, IC = 7 mA, f = 1 GHz
VCE = 3 V, IC = 7 mA, f = 1 GHz
VCB = 3 V, IE = 0, f = 1 MHz
Notes 1. Pulse measurement: PW ≤ 350 μs, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
<R> hFE CLASSIFICATION
Rank
Marking
hFE Value
R23/Y23
R23
40 to 80
R24/Y24
R24
70 to 140
R25/Y25
R25
125 to 250
MIN. TYP. MAX. Unit
−
−
1.0
μA
−
−
1.0
μA
40
110
250
–
3.0
4.5
–
GHz
7
9
–
dB
−
1.2
2.5
dB
−
0.7
1.5
pF
R09DS0022EJ0200 Rev.2.00
Jun 29, 2011
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