2SC4197 Datasheet, PDF (3/10 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial

2SC4197
Main Characteristics
Maximum Collector Dissipation Curve
150
100
50
0
50
100
150
Ambient Temperature Ta (°C)
Gain Bandwidth Product vs.
Collector Current
5
V_CE = 5 V
4
3
2
1
0
1
2
5 10 20
50
Collector Current I_C (mA)
Conversion Gain, Noise Figure
vs. Supply Voltage
25
I_C = 0.8 mA
f = 900 MHz
20
CG
15
10
NF
5
f_out = 30 MHz
f_osc = 930 MHz (−5 dBm)
0
1
2
5
10
Supply Voltage V_CC (V)
Rev.3.00 Aug 10, 2005 page 3 of 9
DC Current Transfer Ratio vs.
Collector Current
200
V_CE = 5 V
160
120
80
40
0
1
2
5 10 20
50
Collector Current I_C (mA)
Collector Output Capacitance vs.
Collector to Base Voltage
1.2
I_E = 0
f = 1 MHz
1.1
1.0
0.9
0.8
0.7
12
5 10 20
50
Collector to Base Voltage V_CB (V)
Conversion Gain, Noise Figure
vs. Collector Current
25
V_CC = 3 V
f = 900 MHz
CG
20
15
NF
10
5
f_out = 30 MHz
f_osc = 930 MHz (−5 dBm)
0
0.1 0.2
0.5 1.0 2
5
Collector Current I_C (mA)