2SC4197 Datasheet, PDF(2/10 Page) Hitachi Semiconductor

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2SC4197 Datasheet, PDF (2/10 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial

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2SC4197

Electrical Characteristics

Item

Collector to base breakdown voltage

Collector cutoff current

Emitter cutoff current

Collector to emitter saturation voltage

DC current transfer ratio

Collector output capacitance

Gain bandwidth product

Conversion gain

Noise figure

(Ta = 25Â°C)

Symbol Min Typ Max Unit

Test conditions

V(BR)CBO

V IC = 10 ÂµA, IE = 0

ICBO

0.1

ÂµA VCB = 15 V, IE = 0

ICEO

ÂµA VCE = 13 V, RBE = â

IEBO

0.3

ÂµA VEB = 3 V, IC = 0

VCE(sat)

0.3

V IC = 20 mA, IB = 4 mA

hFE

180

VCE = 5 V, IC = 5 mA

Cob

0.85 1.3

pF VCB = 10 V, IE = 0, f = 1MHz

3.0

3.8

GHz VCE = 5 V, IC = 20 mA

dB VCC = 5 V, IC = 0.8 mA,

fin = 900 MHz

dB fosc = 930 MHz (â5dBm),

fout = 30 MHz

Rev.3.00 Aug 10, 2005 page 2 of 9

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