2SC2309 Datasheet, PDF (3/7 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial

2SC2309
Main Characteristics
Maximum Collector Dissipation Curve
250
200
150
100
50
0
50
100
150
Ambient Temperature Ta (°C)
DC Current Transfer Ratio vs.
Collector Current
700
V_CE = 12 V
600
500
Ta ^{= 75°C}
400
25
300
200
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2 5 10 20 50
Collector Current I_C (mA)
Base to Emitter Voltage vs. Ambient
Temperature
0.9
0.8
V_CE = 12 V
I_C = 2 mA
0.7
0.6
0.5
0.4
-20 0
20 40 60 80
Ambient Temperature Ta (°C)
Typical Output Characteristics
P
10
26
24
22
C _{= 200 mW}
8
20
18
6
16
14
12
4
10
8
2
6
4
2 µA
I_B = 0
0
4
8
12 16 20 24
Collector to Emitter Voltage V_CE (V)
Typical Transfer Characteristics
5
V_CE = 12 V
4
3
2
1
0
0.2 0.4 0.6 0.8 1.0
Base to Emitter Voltage V_BE (V)
Collector Output Capacitance vs.
Collector to Base Voltage
10
I_E = 0
f= 1 MHz
5
2
1
1
2
5
10
Collector to Base Voltage V_CB (V)
Rev.2.00 Aug 10, 2005 page 3 of 6