2SC2309 Datasheet, PDF(2/7 Page) Hitachi Semiconductor

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2SC2309 Datasheet, PDF (2/7 Pages) Hitachi Semiconductor – Silicon NPN Epitaxial

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2SC2309

Electrical Characteristics

(Ta = 25Â°C)

Item

Symbol Min Typ Max Unit

Test conditions

Collector to base breakdown voltage

V(BR)CBO

V IC = 10 ÂµA, IE = 0

Collector to emitter breakdown voltage V(BR)CEO

V IC = 1 mA, RBE = â

Emitter to base breakdown voltage

V(BR)EBO

V IE = 10 ÂµA, IC = 0

Collector cutoff current

ICBO

0.5

ÂµA VCB = 18 V, IE = 0

Emitter cutoff current

IEBO

0.5

ÂµA VEB = 2 V, IC = 0

DC current transfer ratio

hFE

250

500

VCE = 12 V, IC = 2 mA

Base to emitter voltage

VBE

0.75

V VCE = 12 V, IC = 2 mA

Collector to emitter saturation voltage

VCE(sat)

0.2

V IC = 10 mA, IB = 1 mA

Gain bandwidth product

230

MHz VCE = 12 V, IC = 2 mA

Collector output capacitance

Cob

1.8

3.5

pF VCB = 10 V, IE = 0, f = 1 MHz

Rev.2.00 Aug 10, 2005 page 2 of 6

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