R1QAA3636CBB Datasheet, PDF (29/38 Pages) Renesas Technology Corp – 36-Mbit QDR II+ SRAM 4-word Burst

Common
R1QAA36**C / R1QDA36**C Series
TAP AC Operating Characteristics
(Ta = 0 ~ +70qC @ R1Q*A*****BG-**R** series)
(Ta = -40 ~ +85qC @ R1Q*A*****BG-**I** series)
(V_DD = 1.8V r0.1V)
Parameter
Symbol
Min
Typ
Max Unit
Notes
Test clock (TCK) cycle time
t_THTH
50


ns
TCK high pulse width
t_THTL
20


ns
TCK low pulse width
t_TLTH
20


ns
Test mode select (TMS) setup t_MVTH
5


ns
TMS hold
t_THMX
5


ns
Capture setup
t_CS
5


ns
1
Capture hold
t_CH
5


ns
1
TDI valid to TCK high
t_DVTH
5


ns
TCK high to TDI invalid
t_THDX
5


ns
TCK low to TDO unknown
t_TLQX
0


ns
TCK low to TDO valid
t_TLQV


10
ns
Notes:
1. t_CS + t_CH defines the minimum pause in RAM I/O pad transitions to assure pad data capture.
Rev. 0.10b : 2012.03.12
R10DS0192EJ0010
PAGE : 29