R1QGA7236ABG Datasheet, PDF (21/39 Pages) Renesas Technology Corp – 72-Mbit QDRII+ SRAM 4-word Burst

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R1QGA72 / R1QKA72 Series
Thermal Resistance
Parameter
Symbol Airflow Typ Unit
Test condition
Notes
Junction to Ambient ș_JA
1 m/s 11.0
°C/W
EIA/JEDEC JESD51
1
Junction to Case
ș_JC
-
4.4
Notes:
1. These parameters are calculated under the condition. These are reference values.
2. Tj = Ta + ș_JA ™ Pd
Tj = Tc + ș_JC ™ Pd
where
Tj : junction temperature when the device has achieved a steady-state
after application of Pd (rC)
Ta : ambient temperature (rC)
Tc : temperature of external surface of the package or case (rC)
ș_JA : thermal resistance from junction-to-ambient (rC/W)
ș_JC : thermal resistance from junction-to-case (package) (rC/W)
Pd : power dissipation that produced change in junction temperature (W) (cf.JESD51-2A)
Capacitance
(Ta = +25°C, Frequency = 1.0MHz, V_DD = 1.8V, V_DDQ = 1.5V)
Parameter
Symbol Min Typ
Input capacitance
(SA, /R, /W, /BW, D(separate))
C_IN
⎯4
Clock input capacitance (K, /K, C, /C) C_CLK ⎯ 4
Output capacitance
(Q(separate), DQ(common), CQ, /CQ)
C_I/O
⎯
5
Notes:
1. These parameters are sampled and not 100% tested.
2. Except JTAG (TCK, TMS, TDI, TDO) pins.
Max Unit
5 pF
5 pF
6 pF
Test condition Notes
V_IN = 0 V
1, 2
V_CLK = 0 V
1, 2
V_I/O = 0 V
1, 2
AC Test Conditions
Input waveform (Rise/fall time ≤ 0.3 ns)
1.25V
0.25V
0.75V
Test points
0.75V
Output waveform
V_DDQ/2
Test points
V_DDQ/2
Rev. 0.11 : 2013.01.15
R10DS0183EJ0011
PAGE:21