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RQA0009SXAQS_11 Datasheet, PDF (2/22 Pages) Renesas Technology Corp – Silicon N-Channel MOS FET
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RQA0009SXAQS
Preliminary
Electrical Characteristics
Item
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Forward Transfer Admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Output Power
Power Added Efficiency
Output Power
Power Added Efficiency
Output Power
Power Added Efficiency
Output Power
Power Added Efficiency
Output Power
Power Added Efficiency
Output Power
Power Added Efficiency
Output Power
Power Added Efficiency
Output Power
Power Added Efficiency
Symbol
IDSS
IGSS
VGS(off)
|yfs|
Ciss
Coss
Crss
Pout
PAE
Pout
PAE
Pout
PAE
Pout
PAE
Pout
PAE
Pout
PAE
Pout
PAE
Pout
PAE
Min.
—
—
0.15
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
0.5
3.2
76
40
3.5
33.1
2.0
65.7
38.6
7.2
62.5
33.0
2.0
68.5
38.8
7.6
69.2
33.1
2.1
66.4
39.0
8.0
67.9
35.2
3.3
60
37.8
6.0
65
Max.
15
±2
0.8
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Unit
A
A
V
S
pF
pF
pF
dBm
W
%
dBm
W
%
dBm
W
%
dBm
W
%
dBm
W
%
dBm
W
%
dBm
W
%
dBm
W
%
(Ta = 25°C)
Test Conditions
VDS = 16 V, VGS = 0
VGS = ±5 V, VDS = 0
VDS = 6 V, ID = 1 mA
VDS = 6 V, ID = 1.6 A
VGS = 5 V, VDS = 0, f = 1 MHz
VDS = 6 V, VGS = 0, f = 1 MHz
VDG = 6 V, VGS = 0, f = 1 MHz
VDS = 3.6 V, IDQ = 200 mA
f = 155 MHz,
Pin = +20 dBm (100 mW)
VDS = 7.0 V, IDQ = 200 mA
f = 155 MHz,
Pin = +25 dBm (316 mW)
VDS = 3.6 V, IDQ = 200 mA
f = 360 MHz,
Pin = +20 dBm (100 mW)
VDS = 7.0 V, IDQ = 200 mA
f = 360 MHz,
Pin = +25 dBm (316 mW)
VDS = 3.6 V, IDQ = 200 mA
f = 465 MHz,
Pin = +20 dBm (100 mW)
VDS = 7.0 V, IDQ = 200 mA
f = 465 MHz,
Pin = +25 dBm (316 mW)
VDS = 4.8 V, IDQ = 300 mA
f = 465 MHz,
Pin = +17 dBm (50 mW)
VDS = 6 V, IDQ = 180 mA
f = 520 MHz,
Pin = +25 dBm (316 mW)
Main Characteristics
Maximum Channel Power
Dissipation Curve
20
15
10
5
Typical Output Characteristics
Pulse Test
4
2.0 V
1.75 V
3
1.5 V
2
1.25 V
1
VGS = 1.0 V
00
50
100
150
200
Case Temperature TC (°C)
R07DS0493EJ0200 Rev.2.00
Jun 29, 2011
00
2
4
6
8
10
Drain to Source Voltage VDS (V)
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