RQA0009SXAQS_11 Datasheet, PDF (1/22 Pages) Renesas Technology Corp – Silicon N-Channel MOS FET

RQA0009SXAQS
Silicon N-Channel MOS FET
Features
 High Output Power, High Gain, High Efficiency
Pout = +37.8 dBm, Linear Gain = 18 dB, PAE = 65%
(V_DS = 6 V, f = 520 MHz)
 Compact package capable of surface mounting
 Electrostatic Discharge Immunity Test
(IEC Standard, 61000-4-2, Level4)
Outline
RENESAS Package code: PLZZ0004CA-A
(Package Name : UPAK)
321
1
4
Preliminary Datasheet
R07DS0493EJ0200
(Previous: REJ03G1566-0100)
Rev.2.00
Jun 28, 2011
3
1. Gate
2. Source
3. Drain
4. Source
2, 4
Note: Marking is “SX”.
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Channel dissipation
Channel temperature
Storage temperature
Note: Value at Tc = 25C
Symbol
V_DSS
V_GSS
I_D
Pch^note
Tch
Tstg
Ratings
16
±5
3.2
15
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
W
C
C
This device is sensitive to electro static discharge. An adequate careful handling procedure is requested.
R07DS0493EJ0200 Rev.2.00
Jun 29, 2011
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