RJK6011DJE_15 Datasheet, PDF (2/7 Pages) Renesas Technology Corp – 600V - 0.1A - MOS FET High Speed Power Switching

RJK6011DJE
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max Unit
Test conditions
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
resistance
V_(BR)DSS
600
—
—
V I_D = 10 mA, V_GS = 0
I_DSS
—
—
1
μA V_DS = 600 V, V_GS = 0
I_GSS
—
—
±0.1 μA V_GS = ±30 V, V_DS = 0
V_GS(off)
3
—
5
V V_DS = 10 V, I_D = 1 mA
R_DS(on)
—
35
52
Ω I_D = 0.05 A, V_GS = 10 V ^Note2
Input capacitance
Output capacitance
Reverse transfer capacitance
Ciss
—
25
—
pF V_DS = 25 V
Coss
—
4.7
—
pF ^VGS ^{= 0}
Crss
—
0.9
—
pF ^{f = 1 MHz}
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Notes: 2. Pulse test
t_d(on)
—
33
—
ns I_D = 0.05 A
t_r
—
16
—
ns ^VGS ^{= 10 V}
t_d(off)
—
54
—
ns ^{RL = 6000 Ω}
t_f
—
300
—
ns ^{Rg = 10 Ω}
Qg
—
3.7
—
nC V_DD = 480 V
Qgs
—
0.4
—
nC ^VGS ^{= 10 V}
Qgd
—
2.7
—
nC ^{ID = 0.1 A}
V_DF
—
0.80
1.35
V I_F = 0.1 A, V_GS = 0 ^Note2
3. Since this device is equipped with high voltage FET chip (V_DSS ≥ 600 V), high voltage may be supplied.
Therefore, please be sure to confirm about Electric discharge between Drain terminal and other terminal.
4. This device is sensitive to electrostatic discharge.
It is recommended to adopt appropriate cautions when handling this product.
R07DS1153EJ0400 Rev.4.00
Jan 28, 2014
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