RJK6011DJE_15 Datasheet, PDF (1/7 Pages) Renesas Technology Corp – 600V - 0.1A - MOS FET High Speed Power Switching

RJK6011DJE
600V - 0.1A - MOS FET
High Speed Power Switching
Features
• Low on-resistance
R_DS(on) = 35 Ω typ. (at I_D = 0.05 A, V_GS = 10 V, Ta = 25°C)
• Low drive current
• High density mounting
Outline
RENESAS Package code: PRSS0003DC-A
(Package name: TO-92 Mod)
G
321
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Channel dissipation
Channel to ambient thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1%
Symbol
V_DSS
V_GSS
I_D
I_D
Note1
(pulse)
I_DR
I_DR
Note1
(pulse)
Pch
θ_ch-a
Tch
Tstg
Preliminary Datasheet
R07DS1153EJ0400
(Previous: REJ03G1577-0300)
Rev.4.00
Jan 28, 2014
D
1. Source
2. Drain
3. Gate
S
Ratings
600
±30
0.1
0.4
0.1
0.4
0.9
139
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
W
°C/W
°C
°C
R07DS1153EJ0400 Rev.4.00
Jan 28, 2014
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