RJK1209JPE_15 Datasheet, PDF (2/7 Pages) Renesas Technology Corp – 120V - 80A - N Channel Power MOS FET High Speed Power Switching

RJK1209JPE
Preliminary
Electrical Characteristics
Item
Symbol Min
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
I_GSS
—
I_DSS
—
V_GS(off)
2.4
R_DS(on)
—
Input capacitance
Ciss
—
Output capacitance
Coss
—
Reverse transfer capacitance
Crss
—
Total gate charge
Qg
—
Gate to source charge
Qgs
—
Gate to drain charge
Qgd
—
Turn-on delay time
t_d(on)
—
Rise time
t_r
—
Turn-off delay time
t_d(off)
—
Fall time
t_f
—
Body-drain diode forward voltage
V_DF
—
Body-drain diode reverse recovery
t_rr
—
time
Note: 5. Pulse test
Typ
—
—
—
14
4600
570
190
65
18
12
30
13
75
8
0.96
100
Max
±10
10
3.6
19
—
—
—
—
—
—
—
—
—
—
1.25
—
Unit
μA
μA
V
mΩ
(Ta = 25°C)
Test Conditions
V_GS = ±20 V, V_DS = 0
V_DS = 120 V, V_GS = 0
I_D = 1 mA, V_DS = 10 V
I_D = 40 A, V_GS = 10 V ^Note5
pF V_DS = 10V, V_GS = 0,
pF ^{f = 1 MHz}
pF
nC V_DD = 50 V, V_GS = 10 V,
nC ^ID ^{= 80 A}
nC
ns I_D = 40 A, R_L = 0.75 Ω,
ns ^VGS ^{= 10 V, R}G ^{= 4.7 Ω}
ns
ns
V
I_F = 80 A, V_GS = 0 ^Note5
ns I_F = 80 A, V_GS = 0
di_F/dt = 100 A/μs
R07DS0691EJ0100 Rev.1.00
Mar 08, 2012
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