RJK1209JPE_15 Datasheet, PDF (1/7 Pages) Renesas Technology Corp – 120V - 80A - N Channel Power MOS FET High Speed Power Switching

RJK1209JPE
120V - 80A - N Channel Power MOS FET
High Speed Power Switching
Features
• For Automotive application
• AEC-Q101 compliant
• Low on-resistance : R_DS(on) = 14 mΩ typ.
• Low input capacitance: Ciss = 4600 pF typ
Preliminary Datasheet
R07DS0691EJ0100
Rev.1.00
Mar 08, 2012
Outline
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK(S)-(1) )
2, 4
4
D
123
1G
1. Gate
2. Drain
3. Source
4. Drain
S
3
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Strage temperature
Notes: 1. PW ≤ 10μs duty cycle ≤ 1%
2. Tch = 25°C, Rg ≥ 50 Ω
3. Tc = 25°C
4. AEC-Q101 compliant
Symbol
V_DSS
V_GSS
I_D
I_D (pulse) ^Note1
I_DR
I_AP ^Note2
E_AR ^Note2
Pch ^Note3
Tch ^Note4
Tstg
Thermal Impedance Characteristics
• Channel to case thermal impedance θch-c: 1.0°C/W
Value
120
±20
80
320
80
45
173
150
175
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°C
°C
R07DS0691EJ0100 Rev.1.00
Mar 08, 2012
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