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RJH60D2DPE Datasheet, PDF (2/4 Pages) Renesas Technology Corp – Silicon N Channel IGBT Application: Inverter | |||
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RJH60D2DPE
Preliminary
Electrical Characteristics
Item
Symbol Min
Zero gate voltage collector current
/ diode reverse current
ICES / IR
â
Gate to emitter leak current
IGES
â
Gate to emitter cutoff voltage
VGE(off)
4.0
Collector to emitter saturation voltage VCE(sat
â
VCE(sat
â
Input capacitance
Cies
â
Output capacitance
Coes
â
Reveres transfer capacitance
Cres
â
Total gate charge
Qg
â
Gate to emitter charge
Qge
â
Gate to collector charge
Qgc
â
Switching time
td(on)
â
tr
â
td(off)
â
tf
â
Typ
â
â
â
1.6
1.8
430
35
15
19.1
3.0
9.0
30
30
50
90
Max
100
±1
6.0
2.2
â
â
â
â
â
â
â
â
â
â
â
(Ta = 25°C)
Unit
Test Conditions
μA VCE = 600 V, VGE = 0
μA VGE = ±30 V, VCE = 0
V
VCE = 10 V, IC = 1 mA
V
IC = 10 A, VGE = 15 V Note3
V
IC = 20 A, VGE = 15 V Note3
pF VCE = 25 V
pF
VGE = 0
pF f = 1 MHz
nC VGE = 15 V
nC VCE = 300 V
nC IC = 10 A
ns IC = 10 A
ns RL = 30.0 Ω
ns
VGE = 15 V
ns Rg = 5 Ω
FRD forward voltage
FRD reverse recovery time
Notes: 3. Pulse test.
4. Under development
VF
â
1.8
2.3
V
IF = 10 A Note3
trr
â
100
â
ns IF = 10 A
diF/dt = 100 A/μs
â The specifications potentially be changed without notice.
REJ03G1842-0100 Rev.1.00 Oct 14, 2009
Page 2 of 3
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