RJH60D2DPE Datasheet, PDF (2/4 Pages) Renesas Technology Corp – Silicon N Channel IGBT Application: Inverter

RJH60D2DPE
Preliminary
Electrical Characteristics
Item
Symbol Min
Zero gate voltage collector current
/ diode reverse current
I_CES / I_R
—
Gate to emitter leak current
I_GES
—
Gate to emitter cutoff voltage
V_GE(off)
4.0
Collector to emitter saturation voltage V_CE(sat
—
V_CE(sat
—
Input capacitance
Cies
—
Output capacitance
Coes
—
Reveres transfer capacitance
Cres
—
Total gate charge
Qg
—
Gate to emitter charge
Qge
—
Gate to collector charge
Qgc
—
Switching time
t_d(on)
—
t_r
—
t_d(off)
—
t_f
—
Typ
—
—
—
1.6
1.8
430
35
15
19.1
3.0
9.0
30
30
50
90
Max
100
±1
6.0
2.2
—
—
—
—
—
—
—
—
—
—
—
(Ta = 25°C)
Unit
Test Conditions
μA V_CE = 600 V, V_GE = 0
μA V_GE = ±30 V, V_CE = 0
V
V_CE = 10 V, I_C = 1 mA
V
I_C = 10 A, V_GE = 15 V ^Note3
V
I_C = 20 A, V_GE = 15 V ^Note3
pF V_CE = 25 V
pF
V_GE = 0
pF ^{f = 1 MHz}
nC V_GE = 15 V
nC ^VCE ^{= 300 V}
nC ^{IC = 10 A}
ns I_C = 10 A
ns ^RL ^{= 30.0 Ω}
ns
V_GE = 15 V
ns ^{Rg = 5 Ω}
FRD forward voltage
FRD reverse recovery time
Notes: 3. Pulse test.
4. Under development
V_F
—
1.8
2.3
V
I_F = 10 A ^Note3
t_rr
—
100
—
ns I_F = 10 A
di_F/dt = 100 A/μs
— The specifications potentially be changed without notice.
REJ03G1842-0100 Rev.1.00 Oct 14, 2009
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