RJH60D2DPE Datasheet, PDF (1/4 Pages) Renesas Technology Corp – Silicon N Channel IGBT Application: Inverter

RJH60D2DPE
Silicon N Channel IGBT
Application: Inverter
Features
• High breakdown-voltage
• Low on-voltage
• Built-in diode
Outline
Preliminary
REJ03G1842-0100
Rev.1.00
Oct 14, 2009
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK (S)-(1) )
C
4
123
1. Gate
2. Collector
G
3. Emitter
4. Collecotor
E
Absolute Maximum Ratings
Item
Collector to emitter voltage / diode reverse voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Collector peak current
Collector to emitter diode forward current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal impedance
Junction temperature
Storage temperature
Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1%
2. Value at Tc = 25°C
Symbol
V_CES / V_R
V_GES
I_C
I_C
ic(peak) ^Note1
i_DF
i_D(peak) ^Note1
P_C ^Note2
θj-c ^Note2
Tj
Tstg
Ratings
600
±30
20
10
40
10
40
90
1.39
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
W
°C/ W
°C
°C
REJ03G1842-0100 Rev.1.00 Oct 14, 2009
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