RJH60A85RDPP-M0_15 Datasheet, PDF (2/9 Pages) Renesas Technology Corp – 600V - 15A - IGBT

RJH60A85RDPP-M0
Electrical Characteristics
Item
Symbol Min
Collector to emitter breakdown
voltage
V_(BR)CES
600
Zero gate voltage collector current
/ diode reverse current
I_CES / I_R
—
Gate to emitter leak current
I_GES
—
Gate to emitter cutoff voltage
V_GE(off)
4.5
Collector to emitter saturation voltage V_CE(sat)
—
V_CE(sat)
—
Input capacitance
Cies
—
Output capacitance
Coes
—
Reveres transfer capacitance
Cres
—
Total gate charge
Qg
—
Gate to emitter charge
Qge
—
Gate to collector charge
Qgc
—
Turn-on delay time
t_d(on)
—
Rise time
t_r
—
Turn-off delay time
t_d(off)
—
Fall time
t_f
—
Turn-on energy
E_on
—
Turn-off energy
E_off
—
Total switching energy
E_total
—
Short circuit withstand time
t_sc
3.0
FRD forward voltage
V_F
—
FRD reverse recovery time
t_rr
—
FRD reverse recovery charge
Q_rr
—
FRD peak reverse recovery current
I_rr
—
Notes: 3. Pulse test.
Preliminary
Typ
—
—
—
—
1.5
1.9
880
48
35
56
8.4
33
40
17
86
110
0.43
0.30
0.73
5.0
1.7
160
0.47
7.5
Max
—
1
±100
7.5
1.8
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
(Ta = 25°C)
Unit
Test Conditions
V I_C =10 A, V_GE = 0
A V_CE = 600 V, V_GE = 0 V
nA V_GE = ±30 V, V_CE = 0 V
V
V_CE = 10 V, I_C = 1 mA
V
I_C = 15 A, V_GE = 15 V ^Note3
V
I_C = 30 A, V_GE = 15 V ^Note3
pF V_CE = 25 V
pF ^VGE ^{= 0 V}
pF ^{f = 1 MHz}
nC V_GE = 15 V
nC ^VCE ^{= 300 V}
nC ^{IC = 15 A}
ns V_CC = 300V
ns ^VGE ^{= 15 V}
ns ^{IC = 15 A}
ns ^{Rg = 5 ï€} 
mJ ^{Inductive load}
mJ
mJ
s V_CE  360 V, V_GE = 15 V
Tj=100C
V
I_F = 15 A ^Note3
ns I_F = 15 A
C ^diF^{/dt = 100 A/s}
A
R07DS0811EJ0200 Rev.2.00
Jul 12, 2012
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