 English |
|
|
|
|
|
|
|
| RJH60A85RDPP-M0_15 Datasheet, PDF (1/9 Pages) Renesas Technology Corp – 600V - 15A - IGBT | |||
| |||
|
Preliminary Datasheet
RJH60A85RDPP-M0
600V - 15A - IGBT
Application: Inverter
R07DS0811EJ0200
Rev.2.00
Jul 12, 2012
Features
ï· Reverse conducting IGBT with monolithic diode
ï· Short circuit withstand time (5 ïs typ.)
ï· Low collector to emitter saturation voltage
VCE(sat) = 1.5 V typ. (at IC = 15 A, VGE = 15 V, Ta = 25°C)
ï· Built-in fast recovery diode (trr = 160 ns typ.) in one package
ï· Trench gate and thin wafer technology
ï· High speed switching
tf = 110 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 15 A, Rg = 5 ï, Ta = 25°C, inductive load)
Outline
RENESAS Package code: PRSS0003AF-A
(Package name: TO-220FL)
C
1
23
1. Gate
2. Collector
G
3. Emitter
E
Absolute Maximum Ratings
Item
Collector to emitter voltage / diode reverse voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Collector peak current
Collector to emitter diode forward current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal resistance
Junction temperature
Storage temperature
Notes: 1. PW ï£ 10 ïs, duty cycle ï£ 1%
2. Value at Tc = 25ï°C
Symbol
VCES / VR
VGES
IC
IC
IC(peak) Note1
iDF
iDF(peak) Note1
PC Note2
ï±j-c Note2
Tj
Tstg
Ratings
600
±30
30
15
60
15
60
39.7
3.15
150
â55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
W
ï°C/ W
ï°C
ï°C
R07DS0811EJ0200 Rev.2.00
Jul 12, 2012
Page 1 of 8
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese