RJH1CD6DPQ-A0 Datasheet, PDF(2/4 Page) Renesas Technology Corp – 1200 V - 20 A

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RJH1CD6DPQ-A0 Datasheet, PDF (2/4 Pages) Renesas Technology Corp – 1200 V - 20 A - IGBT Application: Inverter

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RJH1CD6DPQ-A0

Electrical Characteristics

Item

Symbol Min

Zero gate voltage collector current

/ Diode reverse current

ICES/IR

Gate to emitter leak current

IGES

Gate to emitter cutoff voltage

VGE(off)

Collector to emitter saturation voltage VCE(sat)

Input capacitance

Cies

Output capacitance

Coes

Reveres transfer capacitance

Cres

Switching time

td(on)

td(off)

Short circuit withstand time

tsc

FRD forward voltage

FRD reverse recovery time

Notes: 3. Pulse test.

trr

Preliminary

Typ

2.2

1600

100

1.7

100

Max

Â±1

(Ta = 25Â°C)

Unit

Test Conditions

ïA VCE = 1200 V, VGE = 0

ïA VGE = Â±30 V, VCE = 0

VCE = 10 V, IC = 1 mA

IC = 20 A, VGE = 15 V Note3

pF VCE = 25 V

pF VGE = 0

pF f = 1 MHz

ns VCC = 600 V, VGE = 15 V

ns IC = 20 A

ns Rg = 5 ïï

ns Inductive load

ïs VCC ï£ 720 V, VGE = 15 V

Tc ï£ 125Â°C

IF = 20 A Note3

ns IF = 20 A

diF/dt = 100 A/ïs

R07DS0452EJ0100 Rev.1.00

Jul 22, 2011

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