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| RJH1CD6DPQ-A0 Datasheet, PDF (1/4 Pages) Renesas Technology Corp – 1200 V - 20 A - IGBT Application: Inverter | |||
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Preliminary Datasheet
RJH1CD6DPQ-A0
1200 V - 20 A - IGBT
Application: Inverter
R07DS0452EJ0100
Rev.1.00
Jul 22, 2011
Features
ï· Short circuit withstand time (5 ïs typ.)
ï· Low collector to emitter saturation voltage
VCE(sat) = 2.2 V typ. (at IC = 20 A, VGE = 15 V, Ta = 25°C)
ï· Built in fast recovery diode (trr = 100 ns typ.) in one package
ï· Trench gate and thin wafer technology
ï· High speed switching
tf = 100 ns typ. (at VCC = 600 V, VGE = 15 V, IC = 20 A, Rg = 5 ï, Ta = 25°C, inductive load)
Outline
RENESAS Package code: PRSS0003ZH-A
(Package name: TO-247A)
C
4
123
1. Gate
2. Collector
G
3. Emitter
4. Collector
E
Absolute Maximum Ratings
Item
Collector to emitter voltage / diode reverse voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Collector peak current
Collector to emitter diode forward current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal resistance (IGBT)
Junction temperature
Storage temperature
Notes: 1. PW ï£ 10 ïs, duty cycle ï£ 1%
2. Value at Tc = 25ï°C
Symbol
VCES / VR
VGES
IC
IC
ic(peak) Note1
IDF
iDF(peak) Note1
PC Note2
ï±j-c Note2
Tj
Tstg
Ratings
1200
ï±30
40
20
80
20
80
297.6
0.42
150
â55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
W
°C/ W
°C
°C
R07DS0452EJ0100 Rev.1.00
Jul 22, 2011
Page 1 of 3
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