RJH1BF6RDPQ-80_15 Datasheet, PDF (2/7 Pages) Renesas Technology Corp – Silicon N Channel IGBT High Speed Power Switching

RJH1BF6RDPQ-80
Electrical Characteristics
Item
Symbol Min
Zero gate voltage collector current
I_CES
⎯
Gate to emitter leak current
I_GES
⎯
Gate to emitter cutoff voltage
V_GE(off)
3.5
Collector to emitter saturation voltage V_CE(sat)
⎯
⎯
Input capacitance
Cies
⎯
Output capacitance
Coes
⎯
Reverse transfer capacitance
Cres
⎯
Switching time
t_d(on)
⎯
t_r
⎯
t_d(off)
⎯
t_f
⎯
C-E diode forward voltage
V_F
⎯
Notes: 2. Pulse test
Typ
⎯
⎯
5.0
1.7
2.0
2595
54
44
49
44
142
247
3.0
Preliminary
Max
100
±1
7.0
2.2
2.7
⎯
⎯
⎯
⎯
⎯
⎯
⎯
3.9
Unit
μA
μA
V
V
V
pF
pF
pF
ns
ns
ns
ns
V
(Tj = 25°C)
Test Conditions
V_CE = 1100 V, V_GE = 0
V_GE = ±30 V, V_CE = 0
V_CE = 10 V, I_C = 1 mA
I_C = 30 A, V_GE = 15V ^Note2
I_C = 55 A, V_GE = 15V ^Note2
V_CE = 25 V
V_GE = 0 V
f = 1 MHz
I_C = 30 A
V_CE = 600 V, V_GE = 15 V
Rg = 5 Ω ^Note2
Resistive Load
I_F = 10 A ^Note2
R07DS0393EJ0100Rev.1.00
May 16, 2011
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