RJH1BF6RDPQ-80_15 Datasheet, PDF (1/7 Pages) Renesas Technology Corp – Silicon N Channel IGBT High Speed Power Switching

RJH1BF6RDPQ-80
Silicon N Channel IGBT
High Speed Power Switching
Features
• Voltage resonance circuit use
• Reverse conducting IGBT with monolithic body diode
• High efficiency device for induction heating
• Low collector to emitter saturation voltage
V_CE(sat) = 1.7 V typ. (at I_C = 30 A, V_GE = 15 V, Tj = 25°C)
• Gate to emitter voltage rating ±30 V
• Pb-free lead plating
Outline
RENESAS Package code: PRSS0003ZE-A
(Package name: TO-247)
4
G
123
Preliminary Datasheet
R07DS0393EJ0100
Rev.1.00
May 16, 2011
C
1. Gate
2. Collector
3. Emitter
4. Collector
E
Absolute Maximum Ratings
Item
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Collector peak current
Collector to emitter diode forward current
Collector dissipation
Junction to case thermal impedance
Junction temperature
Storage temperature
Notes: 1. Pulse width limited by safe operating area.
Symbol
V_CES
V_GES
I_C
I_C
ic(peak) ^Note1
i_DF
P_C
θj-c
Tj
Tstg
Ratings
1100
±30
55
30
100
20
227.2
0.55
150
–55 to +150
(Tc = 25°C)
Unit
V
V
A
A
A
A
W
°C/W
°C
°C
R07DS0393EJ0100Rev.1.00
May 16, 2011
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