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| NP60N06PDK Datasheet, PDF (2/9 Pages) Renesas Technology Corp – N-channel Power MOS FET | |||
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NP60N06PDK
Absolute Maximum Ratings (TA = 25°C)
Item
Symbol
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) â1
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C)
VGSS
ID(DC)
ID(pulse)
PT1
PT2
Channel Temperature
Tch
Storage Temperature
Tstg
Repetitive Avalanche Current â2
IAR
Repetitive Avalanche Energy â2
EAR
Notes: *1. TC = 25°C, PW ⤠10 μs, Duty Cycle ⤠1%
*2. RG = 25 Ω, VGS = 20 V â 0 V
Ratings
60
±20
±60
±240
105
1.8
175
â55 to +175
25
63
Unit
V
V
A
A
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
1.43
83.3
°C/W
°C/W
R07DS1296EJ0101 Rev.1.01
Dec 21, 2015
Page 2 of 7
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