NESG340033 Datasheet, PDF (2/12 Pages) Renesas Technology Corp – NPN Silicon Germanium RF Transistor

NESG340033
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Symbol
Ratings
Collector to Base Voltage
V_CBO
5.5
Collector to Emitter Voltage
V_CES
13
(Base Short)
Collector to Emitter Voltage
V_CEO
5.5
(Base Open)
Base Current ^Note1
I_B
36
Collector Current
IC
400
Total Power Dissipation ^Note2
P_tot
480
Junction Temperature
Storage Temperature
T_j
150
T_stg
−65 to +150
Notes: 1. Depend on the ESD protect device.
2. Mounted on 3.8 cm × 9.0 cm × 0.8 mm (t) glass epoxy PWB
Unit
V
V
V
mA
mA
mW
°C
°C
THERMAL RESISTANCE (TA = +25°C)
Parameter
Symbol
Ratings
Termal Resistance from
Rth_j-a
260
Junction to Ambient ^Note
Note: Mounted on 3.8 cm × 9.0 cm × 0.8 mm (t) glass epoxy PWB
Unit
°C/W
RECOMMENDED OPERATING RANGE (T_A = +25°C)
Parameter
Collector Current
Symbol MIN.
I_C
−
TYP.
50
MAX. Unit
−
mA
R09DS0016EJ0100 Rev.1.00
Mar 29, 2011
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