NESG340033 Datasheet, PDF (1/12 Pages) Renesas Technology Corp – NPN Silicon Germanium RF Transistor

NESG340033
NPN Silicon Germanium RF Transistor
PreliminaryData Sheet
R09DS0016EJ0100
Rev.1.00
Mar 29, 2011
DESCRIPTION
The NESG340033 is an ideal choice for low noise, low distortion amplification.
FEATURES
• NF = 0.65 dB TYP. @ V_CE = 3.3 V, I_C = 15 mA, f = 1 GHz
• P_{o (1 dB)} = 21 dBm TYP. @ V_CE = 3.3 V, I_{C (set)} = 40 mA, f = 1 GHz
• OIP₃ = 35.5 dBm TYP. @ V_CE = 3.3 V, I_{C (set)} = 50 mA, f = 1 GHz
• Maximum stable power gain: MSG =13.0 dB TYP. @ V_CE = 3.3 V, I_C = 40 mA, f = 1 GHz
• SiGe HBT technology (UHS3) : f_T = 10 GHz
• This product is improvement of ESD
• 3-pin minimold (33 PKG)
APPLICATIONS
• Suitable for up to 1GHz applications.
e.g. LNA (Low Noise Amplifier) or Power splitter for Digital-TV.
OUTLINE
RENESAS Package code: 33
(Package name: 3-pin minimold (33 PKG))
1. Emitter
2. Base
3. Collector
Note: Marking is "R7E"
ORDERING INFORMATION
Part Number
Order Number
Package
Quantity
Supplying Form
NESG340033
NESG340033-T1B
NESG340033-A
NESG340033-T1B-A
3-pin minimold
(33 PKG)
(Pb-Free)
50 pcs
(Non reel)
3 kpcs/reel
• Embossed tape 8 mm wide
• Pin 3 face the perforation side of the tape
• Qty 3 kpcs/reel
Remark To order evaluation samples, please contact your nearby sales office.
Unit sample quantity is 50 pcs.
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
R09DS0016EJ0100 Rev.1.00
Mar 29, 2011
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