N0202R_15 Datasheet, PDF (2/5 Pages) Renesas Technology Corp – PNP SILICON EPITAXIAL TRANSISTOR

N0202R
TYPICAL CHARACTERISTICS (T_a = 25C)
DERATING FACTOR FORWARD BIAS
SAFE OPERATING AREA
120
100
80
60
40
20
0
0
−0.1
20 40 60 80 100 120 140 160
TA - Ambient Temperature - ˚C
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
−0.08
−0.06
−0.04
−0.02
0
0
1000
−100
−90
−80
−70
−60
−50
−40
−30
−20
IB = −10 A
−2
−4
−6
−8
−10
VCE - Collector to Emitter Voltage - (V)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
125˚C
25˚C
25˚C
VCE = −2 V
Pulsed
SAFE OPERATING AREA
−10
Ta = 25˚C
1 ms ^{Single pulse}
10 ms
−1
100 ms
−0.1
−0.01
−1
−10
−100
VCE - Collector to Emitter Voltage - (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
−1
−4.0
−10 ^−3.0
−2.0
−0.8
−0.6
−0.4
IB = −1.0 mA
−0.2
0
0
−0.4
−0.8
−1.2
−1.6
−2
VCE - Collector to Emitter Voltage - (V)
COLLECTOR AND BASE SATURATION VOLTAGE vs.
COLLECTOR CURRENT
−10
IC = 30IB
−1
−0.1
VBE(sat)
VCE(sat)
−0.01
100
−0.001 −0.01
−0.1
−1
−10
IC - Collector Current - (A)
R07DS0720EJ0100 Rev.1.00
Mar 30, 2012
−0.001
−0.01
−0.1
−1
−10
IC - Collector Current - (A)
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