N0202R_15 Datasheet, PDF (1/5 Pages) Renesas Technology Corp – PNP SILICON EPITAXIAL TRANSISTOR

N0202R
PNP SILICON EPITAXIAL TRANSISTOR
FEATURES
 Complements to N0202S.
 V_CEO = 20 V
 I_C(DC) = 2.0 A
 Miniature package SOT-23F (2SB1114: Package variation of 3pPoMM)
PRODUCT LINEUP
Part Number
N0202R-T1-AT
Packing
Tape 3000p/reel
Package Name
SOT-23F
Package Code
PVSF0003ZA-A
Data Sheet
R07DS0720EJ0100
Rev.1.00
Mar 30, 2012
Mass [TYP.]
0.0126g
ABSOLUTE MAXIMUM RATINGS (T_a = 25C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
V_CBO
20
V
Collector to Emitter Voltage V_CEO
20
V
Emitter to Base Voltage
V_EBO
6.0
V
Collector Current (DC)
I_C(DC)
2.0
A
Collector Current (pulse) *¹
I_C(pulse)
3.0
A
Total Power Dissipation
P_T1
Total Power Dissipation *²
P_T2
0.2
W
1.0
W
Junction Temperature
T_j
150
C
Storage Temperature
T_stg
55 to 150
C
Note *1. PW  10 ms, Duty Cycle  50%
*2. FR-4 board size 2500 mm²  1.6 mm, t  5 sec
ELECTRICAL CHARACTERISTICS (T_a = 25C)
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
DC Current Gain
Collector Saturation Voltage
Base Saturation Voltage
Base to Emitter Voltage
Gain Bandwidth Product
Output Capacitance
Note *1. Pulsed
Symbol
I_CBO
I_EBO
h_FE1*¹
h_FE2*¹
V_CE(sat)*¹
V_BE(sat)*¹
V_BE*¹
f_T
C_ob
Condition
V_CB = 16 V, I_E = 0
V_EB = 6.0 V, I_C = 0
V_CE = 2.0 V, I_C = 100 mA
V_CE = 2.0 V, I_C = 2.0 A
I_C = 1.5 A, I_B = 50 mA
I_C = 1.5 A, I_B = 50 mA
V_CE = 6 V, I_C = 100 mA
V_CE = 6.0 V, I_E = 10 mA
V_CB = 10.0 V, I_E = 0, f = 1.0 MHz
MIN.
135
40
650
TYP.
350
MAX.
100
100
600
0.3
1.05
680
90
55
0.5
1.2
750
Unit
nA
nA
V
V
mV
MHz
pF
h_FE Classification
Marking
hFE1
ZM
135 to 270
ZL
200 to 400
ZK
300 to 600
R07DS0720EJ0100 Rev.1.00
Mar 30, 2012
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