HAT3015T Datasheet, PDF (2/4 Pages) Renesas Technology Corp – Silicon N/P Channel Power MOS FET High Speed Power Switching

HAT3015T
Electrical Characteristics
(Ta = 25°C)
• N Channel
Item
Drain to Source breakdown voltage
Gate to Source breakdown voltage
Gate to Source leak current
Zero Gate voltage Drain current
Gate to Source cutoff voltage
Static Drain to Source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–Drain diode forward voltage
Notes: 4. Pulse test
Symbol Min
V_(BR)DSS 200
V_(BR)GSS ±15
I_GSS
—
I_DSS
—
V_GS(off) 1.0
R_DS(on)
—
R_DS(on)
—
R_DS(on)
—
|y_fs|
0.56
Ciss
—
Coss —
Crss
—
t_d(on)
—
t_r
—
t_d(off)
—
t_f
—
V_DF
—
Typ
—
—
—
—
—
1.6
1.9
2.4
0.86
120
29
10
10
14
24
9
0.9
Max
—
—
±10
5
2.1
2.2
2.7
5.5
—
—
—
—
—
—
—
—
1.4
Unit
V
V
µA
µA
V
Ω
Ω
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
Test Conditions
I_D = 10 mA, V_GS = 0
I_G = ±100 µA, V_DS = 0
V_GS = ±12 V, V_DS = 0
V_DS = 200 V, V_GS = 0
V_DS = 10 V, I _D = 1 mA
I_D = 0.5 A, V_GS = 10 V ^Note4
I_D = 0.5 A, V_GS = 4 V ^Note4
I_D = 2 A, V_GS = 5 V ^Note4
I_D = 0.5 A, V_DS = 10 V ^Note4
V_DS = 10 V, V_GS = 0
f = 1 MHz
V_GS = 5 V, I_D = 0.5 A
V_DD ≅ 30 V
IF = 0.5 A, V_GS = 0 ^Note4
• P Channel
Item
Drain to Source breakdown voltage
Gate to Source breakdown voltage
Gate to Source leak current
Zero Gate voltage Drain current
Gate to Source cutoff voltage
Static Drain to Source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–Drain diode forward voltage
Notes: 4. Pulse test
Symbol Min
V_(BR)DSS –200
V_(BR)GSS ±15
I_GSS
—
I_DSS
—
V_GS(off) –1.0
R_DS(on)
—
R_DS(on)
—
R_DS(on)
—
|y_fs|
0.29
Ciss
—
Coss —
Crss
—
t_d(on)
—
t_r
—
t_d(off)
—
t_f
—
V_DF
—
Typ
—
—
—
—
—
5.0
6.0
7.0
0.45
140
37
10
12
9
25
15
–0.9
Max
—
—
±10
–5
–2.0
6.2
7.5
10.0
—
—
—
—
—
—
—
—
–1.4
Unit
V
V
µA
µA
V
Ω
Ω
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
Test Conditions
I_D = –10 mA, V_GS = 0
I_G = ±100 µA, V_DS = 0
V_GS = ±12 V, V_DS = 0
V_DS = –200 V, V_GS = 0
V_DS = –10 V, I _D = –1 mA
I_D = –0.25 A, V_GS = –10 V ^Note4
I_D = –0.25 A, V_GS = – 4 V ^Note4
I_D = –1 A, V_GS = – 5 V ^Note4
I_D = –0.25 A, V_DS = –10 V ^Note4
V_DS = –10 V, V_GS = 0
f = 1 MHz
V_GS = –5 V, I_D = –0.25 A
V_DD ≅ –30 V
IF = –0.25 A, V_GS = 0 ^Note4
Rev.2.00, Sep.07.2004, page 2 of 3