HAT3015T Datasheet, PDF (1/4 Pages) Renesas Technology Corp – Silicon N/P Channel Power MOS FET High Speed Power Switching

HAT3015T
Silicon N/P Channel Power MOS FET
High Speed Power Switching
Features
• Low on-resistance
• Capable of 4 V gate drive
• High density mounting
Outline
REJ03G0405-0200
Rev.2.00
Sep.07.2004
TSSOP-8
1
8
D
D
4
5
87 ^{6 5}
1, 8 Drain
G
G
123 ⁴
3, 6 Source
4, 5 Gate
2, 7 NC
S3
MOS1
Nch
S6
MOS2
Pch
Absolute Maximum Ratings
Ratings
Item
Symbol
Nch
Pch
Drain to Source voltage
V_DSS
200
–200
Gate to Source voltage
V_GSS
±15
±15
Drain current
Drain peak current
I_D
0.5
I_{D(pulse)Note1}
2
–0.25
–1
Body-Drain diode reverse drain current
I_DR
0.5
–0.25
Channel dissipation
Pch ^Note2
1
1
Pch ^Note3
1.5
1.5
Channel temperature
Tch
150
150
Storage temperature
Tstg
–55 to +150
–55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. 1 Drive operation; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s
3. 2 Drive operation; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s
(Ta = 25°C)
Unit
V
V
A
A
A
W
W
°C
°C
Rev.2.00, Sep.07.2004, page 1 of 3