HAT3005R Datasheet, PDF (2/4 Pages) Renesas Technology Corp – Silicon N/P Channel Power MOS FET High Speed Power Switching

HAT3005R
Electrical Characteristics
• N channel
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
Notes: 4. Pulse test
Symbol
V_(BR)DSS
V_(BR)GSS
I_GSS
I_DSS
V_GS(off)
R_DS(on)
R_DS(on)
R_DS(on)
|y_fs|
Ciss
Coss
Crss
t_d(on)
t_r
t_d(off)
t_f
V_DF
t_rr
Min
150
±15
—
—
1.0
—
—
—
0.56
—
—
—
—
—
—
—
—
—
• P channel
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse recovery
time
Notes: 5. Pulse test
Symbol
V_(BR)DSS
V_(BR)GSS
I_GSS
I_DSS
V_GS(off)
R_DS(on)
R_DS(on)
R_DS(on)
|y_fs|
Ciss
Coss
Crss
t_d(on)
t_r
t_d(off)
t_f
V_DF
t_rr
Min
–150
±15
—
—
–1.0
—
—
—
0.29
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
1.6
1.9
2.4
0.86
95
42
11
9
16
18
14
0.9
90
Typ
—
—
—
—
—
5.0
6.0
7.0
0.45
92
37
10
10
13
22
15
–0.9
80
Max
—
—
±10
5
2.1
2.2
2.7
5.5
—
—
—
—
—
—
—
—
1.4
—
Max
—
—
±10
–5
–2.0
6.2
7.5
10.0
—
—
—
—
—
—
—
—
–1.4
—
Unit
V
V
µA
µA
V
Ω
Ω
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
(Ta = 25°C)
Test Conditions
I_D = 10 mA, V_GS = 0
I_G = ±100 µA, V_DS = 0
V_GS = ±12 V, V_DS = 0
V_DS = 150 V, V_GS = 0
V_DS = 10 V, I_D = 1 mA
I_D = 0.5 A, V_GS = 10 V ^Note4
I_D = 0.5 A, V_GS = 4 V ^Note4
I_D = 2 A, V_GS = 5 V ^Note4
I_D = 0.5 A, V_DS = 10 V ^Note4
V_DS = 10 V, V_GS = 0, f = 1 MHz
V_GS = 5 V, I_D = 0.5 A,
V_DD ≅ 30 V
IF = 0.5 A, V_GS = 0 ^Note4
IF = 0.5 A, V_GS = 0
diF/ dt = 50 A/µs
Unit
V
V
µA
µA
V
Ω
Ω
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
(Ta = 25°C)
Test Conditions
I_D = –10 mA, V_GS = 0
I_G = ±100 µA, V_DS = 0
V_GS = ±12 V, V_DS = 0
V_DS = –150 V, V_GS = 0
V_DS = –10V, I_D = –1mA
I_D = –0.25 A, V_GS = –10 V^Note5
I_D = –0.25 A, V_GS = –4 V ^Note5
I_D = –1 A, V_GS = –5 V ^Note5
I_D = –0.25 A, V_DS = –10 V ^Note5
V_DS = –10 V, V_GS = 0,
f = 1 MHz
V_GS = –5 V, I_D = –0.25 A,
V_DD ≅ –30 V
IF = –0.25 A, V_GS = 0 ^Note5
IF = –0.25 A, V_GS = 0
diF/ dt = 50 A/µs
Rev.3.00, Jun. 10, 2005, page 2 of 3