HAT3005R Datasheet, PDF (1/4 Pages) Renesas Technology Corp – Silicon N/P Channel Power MOS FET High Speed Power Switching

HAT3005R
Silicon N/P Channel Power MOS FET
High Speed Power Switching
Features
• Low on-resistance
• Capable of 4 V gate drive
• Low drive current
• High density mounting
REJ03G0366-0300
Rev.3.00
Jun. 10, 2005
Outline
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8<FP-8DAV>)
78
DD
8 ^{7 65}
2
4
1 ²³⁴
G
G
S1
Nch
56
DD
S3
Pch
1, 3
Source
2, 4
Gate
5, 6, 7, 8 Drain
Absolute Maximum Ratings
Ratings
Item
Symbol
Nch
Pch
Drain to source voltage
V_DSS
150
–150
Gate to source voltage
V_GSS
±15
±15
Drain current
Drain peak current
I_D
0.5
I_{D(pulse)Note1}
2
–0.25
–1
Body-drain diode reverse drain current
Channel dissipation
Channel dissipation
I_DR
Pch ^Note2
Pch ^Note3
0.5
–0.25
1
1.5
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm)
3. 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm)
(Ta = 25°C)
Unit
V
V
A
A
A
W
W
°C
°C
Rev.3.00, Jun. 10, 2005, page 1 of 3