HAT2220R Datasheet, PDF (2/4 Pages) Renesas Technology Corp – Silicon N Channel MOS FET High Speed Power Switching

HAT2220R
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Forward transfer admittance
Static drain to source on state
resistance
V_(BR)DSS
I_DSS
I_GSS
V_GS(off)
|y_fs|
R_DS(on)
450
—
—
3.0
0.55
—
—
—
—
—
0.95
5.5
—
1
±0.1
4.5
—
6.5
V
I_D = 10 mA, V_GS = 0
µA
V_DS = 450 V, V_GS = 0
µA
V_GS = ±30 V, V_DS = 0
V
V_DS = 10 V, I_D = 1 mA
S
I_D = 0.4 A, V_DS = 10 V ^Note6
Ω
I_D = 0.4 A, V_GS = 10 V ^Note6
Input capacitance
Output capacitance
Reverse transfer capacitance
Ciss
—
140
—
Coss
—
17
—
Crss
—
5
—
pF
V_DS = 25 V
pF
V_GS = 0
pF ^{f = 1 MHz}
Turn-on delay time
Rise time
Turn-off delay time
Fall time
t_d(on)
—
22
—
ns I_D = 0.4 A
t_r
—
12
—
ns
V_GS = 10 V
t_d(off)
—
38
—
ns
R_L = 562 Ω
t_f
—
47
—
ns
Rg = 10 Ω
Total gate charge
Gate to source charge
Gate to drain charge
Qg
—
4.9
—
nC V_DD = 360 V
Qgs
—
0.6
—
nC ^VGS ^{= 10 V}
Qgd
—
3.2
—
nC ^{ID = 0.7 A}
Body–drain diode forward voltage
V_DF
—
0.84
1.24
V
I_F = 0.7 A, V_GS = 0 ^Note6
Body–drain diode reverse recovery
t_rr
time
—
120
—
ns
I_F = 0.7 A, V_GS = 0
di_F/dt = 100 A/ µs
Notes: 6. Pulse test
7. Since this device includes two high voltage Power MOS FET chips (V_DSS ≥ 450 V), high voltage margin may
occur. (Between No.6 pin and No.7 pin in the outline fig.) Therefore, please be sure to confirm about Electric
discharge between No.6 pin and No.7 pin in the equivalent circuit.
REJ03G1572-0500 Rev.5.00 Jul 20, 2007
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