HAT2220R Datasheet, PDF (1/4 Pages) Renesas Technology Corp – Silicon N Channel MOS FET High Speed Power Switching

HAT2220R
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
• Low drive current
• High density mounting
Outline
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8 <FP-8DAV> )
78
DD
56
DD
87 ⁶⁵
1234
2
4
G
G
S1
MOS1
S3
MOS2
REJ03G1572-0500
Rev.5.00
Jul 20, 2007
1, 3
2, 4
5, 6, 7, 8
Source
Gate
Drain
Absolute Maximum Ratings
Item
Symbol
Ratings
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
V_DSS
V_GSS
I_D ^Note1
I_{D(pulse)Note2}
450
±30
0.7
2.1
Body-drain diode reverse drain current
I_DR
0.7
Avalanche current
I_AP ^Note3
0.7
Channel dissipation
Pch ^Note4
2
Channel dissipation
Pch ^Note5
3
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 1 s
2. PW ≤ 10 µs, duty cycle ≤ 1%
3. STch = 25 °C, Tch ≤ 150 °C
4. 1 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s
5. 2 Drive operation : When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s
(Ta = 25°C)
Unit
V
V
A
A
A
A
W
W
°C
°C
REJ03G1572-0500 Rev.5.00 Jul 20, 2007
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