HAT2200WP_10 Datasheet, PDF (2/8 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2200WP
Electrical Characteristics
Item
Symbol Min
Drain to source breakdown voltage V_(BR)DSS 100
Gate to source leak current
I_GSS
—
Zero gate voltage drain current
I_DSS
—
Gate to source cutoff voltage
V_GS(off)
3.5
Static drain to source on state
R_DS(on)
—
resistance
R_DS(on)
—
Forward transfer admittance
|y_fs|
19
Input capacitance
Ciss
—
Output capacitance
Coss
—
Reverse transfer capacitance
Crss
—
Gate resistance
Rg
—
Total gate charge
Qg
—
Gate to source charge
Qgs
—
Gate to drain charge
Qgd
—
Turn-on delay time
t_d(on)
—
Rise time
t_r
—
Turn-off delay time
t_d(off)
—
Fall time
t_f
—
Body–drain diode forward voltage
V_DF
—
Body–drain diode reverse recovery
t_rr
—
time
Notes: 4. Pulse test
Typ
—
—
—
—
22
23
33
2300
280
90
1.3
32
12
8
16
9.5
31
4.6
0.82
50
Max
—
±0.1
1
5.0
28
33
—
—
—
—
—
—
—
—
—
—
—
—
1.07
—
Preliminary
Unit
V
A
A
V
m
m
S
pF
pF
pF

nc
nc
nc
ns
ns
ns
ns
V
ns
(Ta = 25°C)
Test Conditions
I_D = 10 mA, V_GS = 0
V_GS = ±20 V, V_DS = 0
V_DS = 100 V, V_GS = 0
V_DS = 10 V, I_D = 1 mA
I_D = 10 A, V_GS = 10 V ^Note4
I_D = 10 A, V_GS = 8 V ^Note4
I_D = 10 A, V_DS = 10 V ^Note4
V_DS = 10 V
V_GS = 0
f = 1 MHz
V_DD = 50 V
V_GS = 10 V
I_D = 20 A
V_GS = 10 V, I_D = 10 A
V_DD  30 V
R_L = 3 
Rg = 4.7 
I_F = 20 A, V_GS = 0 ^Note4
I_F = 20 A, V_GS = 0
di_F/ dt = 100 A/ s
REJ03G1678-0310 Rev.3.10
May 13, 2010
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