HAT2200WP_10 Datasheet, PDF (1/8 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2200WP
Silicon N Channel Power MOS FET
Power Switching
Features
 Capable of 8 V gate drive
 Low drive current
 High density mounting
 Low on-resistance
R_DS(on) = 22 m typ. (at V_GS = 10 V)
Outline
Preliminary Datasheet
REJ03G1678-0310
Rev.3.10
May 13, 2010
RENESAS Package code: PWSN0008DA-A
(Package name: WPAK)
5 ⁶⁷⁸
5 678
D DDD
4
4 321
G
1, 2, 3 Source
4
Gate
5, 6, 7, 8 Drain
S SS
1 23
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal Impedance
Channel temperature
Storage temperature
Notes: 1. PW  10 s, duty cycle  1%
2. Value at Tch = 25°C, Rg  50 
3. Tc = 25°C
Symbol
V_DSS
V_GSS
I_D
I_D(pulse) ^Note1
I_DR
I_AP ^{Note 2}
E_AR ^{Note 2}
Pch ^Note3
ch-c ^Note3
Tch
Tstg
Ratings
100
±20
20
80
20
20
40
20
6.25
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°C/W
°C
°C
REJ03G1678-0310 Rev.3.10
May 13, 2010
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