HAT2119H Datasheet, PDF (2/4 Pages) Renesas Technology Corp – Silicon N Channel MOS FET High Speed Power Switching

HAT2119H
Electrical Characteristics
Item
Symbol Min
Drain to source breakdown voltage
V_(BR)DSS
250
Zero gate voltage drain current
I_DSS
—
Gate to source leak current
I_GSS
—
Gate to source cutoff voltage
V_GS(off)
3.0
Forward transfer admittance
|y_fs|
2.0
Static drain to source on state resistance R_DS(on)
—
Input capacitance
Ciss
—
Output capacitance
Coss
—
Reverse transfer capacitance
Crss
—
Turn-on delay time
t_d(on)
—
Rise time
t_r
—
Turn-off delay time
t_d(off)
—
Fall time
t_f
—
Total gate charge
Qg
—
Gate to source charge
Qgs
—
Gate to drain charge
Qgd
—
Body-drain diode forward voltage
V_DF
—
Body-drain diode reverse recovery time
t_rr
—
Notes: 4. Pulse test
Typ
—
—
—
—
4.0
0.48
450
60
12
19
10
48
10
14
2.5
7
0.85
95
Max
—
1
±0.1
4.0
—
0.63
—
—
—
—
—
—
—
—
—
—
1.30
—
Unit
V
µA
µA
V
S
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
(Ta = 25°C)
Test conditions
I_D = 10 mA, V_GS = 0
V_DS = 250 V, V_GS = 0
V_GS = ±30 V, V_DS = 0
V_DS = 10 V, I_D = 1 mA
I_D = 2.5 A, V_DS = 10 V ^Note4
I_D = 2.5 A, V_GS = 10 V ^Note4
V_DS = 25 V
V_GS = 0
f = 1 MHz
I_D = 2.5 A
V_GS = 10 V
R_L = 50 Ω
Rg = 10 Ω
V_DD = 200 V
V_GS = 10 V
I_D = 5 A
I_F = 5 A, V_GS = 0 ^Note4
I_F = 5 A, V_GS = 0
di_F/dt = 100 A/µs
Rev.3.00 Dec 19, 2006 page 2 of 3