HAT2119H Datasheet, PDF (1/4 Pages) Renesas Technology Corp – Silicon N Channel MOS FET High Speed Power Switching

HAT2119H
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low drive current.
• Low on-resistance
• Low profile
Outline
RENESAS Package code: PTZZ0005DA-A
(Package name: LFPAK )
5
4
G
1 ²³⁴
5
D
S SS
1 23
REJ03G0176-0300
Rev.3.00
Dec 19, 2006
1, 2, 3
4
5
Source
Gate
Drain
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch ≤ 150°C
Symbol
V_DSS
V_GSS
I_D
I_D(pulse) ^Note1
I_DR
I_DR(pulse) ^Note1
I_AP ^Note3
E_AR ^Note3
Pch ^Note2
θch-c
Tch
Tstg
Ratings
250
±30
5
20
5
20
5
1.5
20
6.25
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
mJ
W
°C/W
°C
°C
Rev.3.00 Dec 19, 2006 page 1 of 3