HAT2058R_05 Datasheet, PDF (2/8 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET High Speed Power Switching

HAT2058R, HAT2058RJ
Absolute Maximum Ratings
Item
Symbol
Value
HAT2058R
HAT2058RJ
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
VDSS
VGSS
ID ^{Note 2}
ID (pulse) ^{Note 1}
100
±20
4
32
100
±20
4
32
Body-drain diode reverse drain current
IDR
4
4
Avalanche current
IAP ^{Note 4}
—
4
Avalanche energy
EAR ^{Note 4}
—
1.6
Channel dissipation
Pch ^{Note 2}
2
2
Pch ^{Note 3}
3
3
Channel temperature
Tch
150
150
Storage temperature
Tstg
–55 to +150
–55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. 1 Drive operation: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
3. 2 Drive operation: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
4. Value at Tch = 25°C, Rg ≥ 50 Ω
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
W
°C
°C
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Zero gate voltage drain HAT2058R
current
HAT2058RJ
Zero gate voltage drain HAT2058R
current
HAT2058RJ
Gate to source leak current
Gate to source cutoff voltage
Forward transfer admittance
Static drain to source on state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Note: 5. Pulse test
(Ta = 25°C)
Symbol Min Typ Max Unit
Test Conditions
V (BR) DSS 100
—
—
V ID = 10 mA, VGS = 0
V (BR) GSS ±20
—
—
V IG = ±100 µA, VDS = 0
IDSS
—
—
1
µA VDS = 100 V, VGS = 0
IDSS
—
—
0.1 µA
IDSS
—
—
—
µA VDS = 80 V, VGS = 0
IDSS
—
—
10
µA Ta = 125°C
IGSS
—
—
±10
µA VGS = ±16 V, VDS = 0
VGS (off)
|yfs|
RDS (on)
RDS (on)
1.0
— 2.5
V VDS = 10 V, ID = 1 mA
3
5
—
S
ID = 2 A, VDS = 10 V ^{Note 5}
—
120
145
mΩ ID = 2 A, VGS = 10 V ^{Note 5}
—
150
180
mΩ ID = 2 A, VGS = 4 V ^{Note 5}
Ciss
— 420 —
pF VDS = 10 V, VGS = 0
Coss
— 180 —
pF f = 1 MHz
Crss
— 100 —
pF
td (on)
tr
td (off)
tf
VDF
trr
—
10
—
—
30
—
— 110 —
—
60
—
— 0.85 1.1
—
75
—
ns VGS = 10 V, ID = 2 A,
ns VDD ≅ 30 V
ns
ns
V
IF = 4 A, VGS = 0 ^{Note 5}
ns IF = 4 A, VGS = 0
diF/dt = 50 A/µs
Rev.2.00 Sep 07, 2005 page 2 of 7