HAT2058R_05 Datasheet, PDF (1/8 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET High Speed Power Switching

HAT2058R, HAT2058RJ
Silicon N Channel Power MOS FET
High Speed Power Switching
Features
• Low on-resistance
• Capable of 4 V gate drive
• Low drive current
• High density mounting
• “J” is for Automotive application
High temperature D-S leakage guarantee
Avalanche rating
Outline
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8 <FP-8DAV> )
78
DD
56
DD
87 ⁶⁵
1234
2
4
G
G
S1
MOS1
S3
MOS2
REJ03G1174-0200
(Previous: ADE-208-934)
Rev.2.00
Sep 07, 2005
1, 3
2, 4
5, 6, 7, 8
Source
Gate
Drain
Rev.2.00 Sep 07, 2005 page 1 of 7