HAT1065T Datasheet, PDF (2/4 Pages) Renesas Technology Corp – Silicon P Channel MOS FET High Speed Power Switching

HAT1065T
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Notes: 4. Pulse test
Symbol
V_(BR)DSS
V_(BR)GSS
I_GSS
I_DSS
V_GS(off)
R_DS(on)
R_DS(on)
R_DS(on)
|y_fs|
Ciss
Coss
Crss
t_d(on)
t_r
t_d(off)
t_f
V_DF
Min
–200
±15
—
—
–1.0
—
—
—
0.29
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
5.0
6.0
7.0
0.45
140
37
10
12
9
25
15
–0.9
Max
—
—
±10
–5
–2.0
6.2
7.5
10.0
—
—
—
—
—
—
—
—
–1.4
Unit
V
V
µA
µA
V
Ω
Ω
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
(Ta = 25°C)
Test Conditions
I_D = –10 mA, V_GS = 0
I_G = ±100 µA, V_DS = 0
V_GS = ±12 V, V_DS = 0
V_DS = –200 V, V_GS = 0
V_DS = –10 V, I_D = –1 mA
I_D = –0.25 A, V_GS = –10 V ^Note4
I_D = –0.25 A, V_GS = –4 V ^Note4
I_D = –1 A, V_GS = –5 V ^Note4
I_D = –0.25 A, V_DS = –10 V ^Note4
V_DS = –10 V
V_GS = 0
f = 1 MHz
V_GS = –5 V, I_D = –0.25 A
V_DD ≅ –30 V
I_F = –0.25 A, V_GS = 0 ^Note4
REJ03G0161-0200 Rev.2.00 Aug 06, 2007
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