HAT1065T Datasheet, PDF (1/4 Pages) Renesas Technology Corp – Silicon P Channel MOS FET High Speed Power Switching

HAT1065T
Silicon P Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
• Capable of –4 V gate drive
• High density mounting
Outline
RENESAS Package code: PTSP0008JB-B
(Package name: TSSOP-8 <TTP-8DV> )
87 ^{6 5}
123 ⁴
REJ03G0161-0200
Rev.2.00
Aug 06, 2007
1
8
D
D
4
5
G
G
S3
MOS1
S6
MOS2
1, 8 Drain
3, 6 Source
4, 5 Gate
2, 7 NC
Absolute Maximum Ratings
Item
Symbol
Ratings
Drain to source voltage
V_DSS
–200
Gate to source voltage
V_GSS
±15
Drain current
Drain peak current
I_D
I_{D(pulse)Note1}
–0.25
–1
Body-drain diode reverse drain current
Channel dissipation
Channel dissipation
I_DR
Pch ^Note2
Pch ^Note3
–0.25
1
1.5
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. 1 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s
3. 2 Drive operation ; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s
(Ta = 25°C)
Unit
V
V
A
A
A
W
W
°C
°C
REJ03G0161-0200 Rev.2.00 Aug 06, 2007
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