H7N0602AB Datasheet, PDF (2/10 Pages) Renesas Technology Corp – Silicon N Channel MOS FET High Speed Power Switching

H7N0602AB
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
V_DSS
V_GSS
I_D
I_D (pulse)^Note1
I_DR
I_APNote3
E_ARNote3
Pch^Note2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
Ratings
60
±20
85
340
85
65
362
100
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°C
°C
Rev.2.00, Oct.30.2003, page 2 of 9