H7N0602AB Datasheet, PDF (1/10 Pages) Renesas Technology Corp – Silicon N Channel MOS FET High Speed Power Switching

H7N0602AB
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
R_DS(on) = 4.1 mΩ typ.
• Low drive current
• Available for 4.5 V gate drive
Outline
TO-220AB
REJ03G0068-0200Z
Rev.2.00
Oct.30.2003
D
G
S
1
2
3
1. Gate
2. Drain
(Flange)
3. Source
Rev.2.00, Oct.30.2003, page 1 of 9