H5N5006FM Datasheet, PDF (2/7 Pages) Renesas Technology Corp – Silicon N Channel MOS FET High Speed Power Switching

H5N5006FM
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Channel dissipation
Channel to case thermal Impedance
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. Tch ≤ 150°C
Symbol
VDSS
VGSS
ID
ID (pulse) ^{Note 1}
IDR
IDR (pulse) ^{Note 1}
IAP ^{Note 3}
Pch ^{Note 2}
θ ch-c
Tch
Tstg
Value
500
±30
3
12
3
12
3
25
5.0
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
W
°C/W
°C
°C
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Body-drain diode reverse recovery charge
Note: 4. Pulse test
(Ta = 25°C)
Symbol Min Typ Max Unit
Test Conditions
V (BR) DSS
500
—
—
V ID = 10 mA, VGS = 0
IGSS
—
— ±0.1 µA VGS = ±30 V, VDS = 0
IDSS
—
—
1
µA VDS = 500 V, VGS = 0
VGS (off)
RDS (on)
|yfs|
3.0
—
4.5
V VDS = 10 V, ID = 1 mA
—
2.5 3.0
Ω ID = 1.5 A, VGS = 10 V ^{Note 4}
1.5 2.5
—
S ID = 1.5 A, VDS = 10 V ^{Note 4}
Ciss
—
365
—
pF VDS = 25 V
Coss
—
35
—
pF VGS = 0
Crss
—
8
— pF f = 1 MHz
td (on)
tr
td (off)
tf
Qg
Qgs
Qgd
—
20
—
ns ID = 1.5 A
—
12
—
ns VGS = 10 V
—
48
—
ns ^RL ^{= 167 Ω}
—
15
—
ns ^{Rg = 10 Ω}
—
14
— nC VDD = 400 V
—
2
—
nC VGS = 10 V
—
8
— nC ^ID ^{= 3 A}
VDF
— 0.85 1.3
V IF = 3 A, VGS = 0
trr
—
270
—
ns IF = 3 A, VGS = 0
Qrr
—
0.8
—
µC diF/dt = 100 A/µs
Rev.2.00 Sep 07, 2005 page 2 of 6