H5N5006FM Datasheet, PDF (1/7 Pages) Renesas Technology Corp – Silicon N Channel MOS FET High Speed Power Switching

H5N5006FM
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance: R _{DS (on)} = 2.5 Ω typ.
• Low leakage current: I_DSS = 1 µA max (at V_DS = 500 V)
• High speed switching: t_f = 15 ns typ (at V_GS = 10 V, V_DD = 250 V, I_D = 1.5 A)
• Low gate charge: Qg = 14 nC typ (at V_DD = 400 V, V_GS = 10 V, I_D = 3 A)
• Avalanche ratings
Outline
RENESAS Package code: PRSS0003AD-A
(Package name: TO-220FM)
D
123
G
S
REJ03G1114-0200
(Previous: ADE-208-1112)
Rev.2.00
Sep 07, 2005
1. Gate
2. Drain
3. Source
Rev.2.00 Sep 07, 2005 page 1 of 6