H5N2502CF Datasheet, PDF (2/4 Pages) Renesas Technology Corp – Silicon N Channel MOS FET High Speed Power Switching

H5N2502CF
Electrical Characteristics
Item
Symbol Min
Drain to source breakdown voltage V_(BR)DSS 250
Gate to source leak current
I_GSS
—
Zero gate voltage drain current
I_DSS
—
Gate to source cutoff voltage
V_GS(off)
3.0
Static drain to source on state
resistance
R_DS(on)
—
Forward transfer admittance
|y_fs|
10
Input capacitance
Ciss
—
Output capacitance
Coss
—
Reverse transfer capacitance
Crss
—
Turn-on delay time
t_d(on)
—
Rise time
t_r
—
Turn-off delay time
t_d(off)
—
Fall time
t_f
—
Total gate charge
Qg
—
Gate to source charge
Qgs
—
Gate to drain charge
Qgd
—
Body–drain diode forward voltage
V_DF
—
Body–drain diode reverse recovery
t_rr
—
time
Body–drain diode reverse recovery
Qrr
—
time
Notes: 4. Pulse test
Typ
—
—
—
—
0.082
Max
—
±0.1
1
4.0
0.105
17
—
2300
—
290
—
80
—
40
—
65
—
140
—
40
—
75
—
12
—
38
—
0.85
1.3
200
—
1.4
—
Unit
V
µA
µA
V
Ω
(Ta = 25°C)
Test Conditions
I_D = 10 mA, V_GS = 0
V_GS = ±30 V, V_DS = 0
V_DS = 250 V, V_GS = 0
I_D = 1 mA, V_DS = 10 V
I_D = 9 A, V_GS = 10 V ^{Note 4}
S
I_D = 9 A, V_DS = 10 V ^{Note 4}
pF V_DS = 25 V
pF ^VGS ^{= 0}
pF ^{f = 1MHz}
ns I_D = 9 A
ns ^RL ^{= 13.9 Ω}
ns ^{VGS = 10 V}
ns ^{Rg = 10 Ω}
nC V_DD = 200 V
nC ^VGS ^{= 10 V}
nC ^{ID = 18 A}
V
I_F = 18 A, V_GS = 0 ^Note4
ns I_F = 18 A, V_GS = 0
diF/ dt = 100 A/µs
µC
Rev.1.00, Nov.26.2004, page 2 of 3