H5N2502CF Datasheet, PDF (1/4 Pages) Renesas Technology Corp – Silicon N Channel MOS FET High Speed Power Switching

H5N2502CF
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
• Low leakage current
• High Speed Switching
Outline
TO-220CFM _D
G
REJ03G0480-0100
Rev.1.00
Nov.26.2004
1. Gate
2. Drain
3. Source
1
S
2
3
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Channel dissipation
Channel to case Thermal Impedance
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. Tch ≤ 150°C
Symbol
V_DSS
V_GSS
I_D
I_D(pulse) ^{Note 1}
I_DR
I_DR(pulse) ^{Note 1}
I_AP ^{Note 3}
Pch ^{Note 2}
θch-c
Tch
Tstg
Ratings
250
±30
18
72
18
72
18
35
3.57
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
W
°C/W
°C
°C
Rev.1.00, Nov.26.2004, page 1 of 3